isc N-Channel MOSFET Transistor
2SK1974
DESCRIPTION ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(...
isc N-Channel
MOSFET Transistor
2SK1974
DESCRIPTION ·Drain Current ID= 10A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 60V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage (VGS=0)
60
V
VGS
Gate-Source
Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
10
A
Ptot
Total Dissipation@TC=25℃
30
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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isc N-Channel
MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
2SK1974
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown
Voltage
VGS= 0; ID= 1mA
60
V
VGS(th) Gate Threshold
Voltage
VDS= 10V; ID=1mA
2.0
4.0
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 1A
0.35 Ω
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
±100 nA
IDSS
Zero Gate
Voltage Drain Current
VDS=60V; VGS= 0
100
µA
Ciss
Input capacitance
Crss
Reverse transfer capacitance
Coss
Output capacitance
VDS=10V; VGS=0V; fT=1MHz
1400
150
pF
600
tr
Rise time
td(on)
Turn-on Delay Time
tf
Fall Time
VGS=10V; ID=5A; VDD=30V; RL=6Ω
80
30 ns
60
t d(off)
Turn-off Delay Time
60
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