isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Fa...
isc N-Channel
MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulator ·UPS ·DC-DC converters ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage (VGS=0)
600
V
VGS
Gate-Source
Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
8
A
Ptot
Total Dissipation@TC=25℃
100
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
1.25 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient
35
℃/W
2SK1939
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isc N-Channel
Mosfet Transistor
2SK1939
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown
Voltage
VGS= 0; ID= 1mA
600
V
VGS(th) Gate Threshold
Voltage
VDS= VGS; ID=1mA
2.5
3.5
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 4A
1.2
Ω
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
±100 nA
IDSS
Zero Gate
Voltage Drain Current
VDS= 600V; VGS= 0
10
500
µA
Ciss Input capacitance
2200
Crss Reverse transfer capacitance
VDS=25V;VGS=0V;fT=1MHz
45
pF
Coss Output capacitance
210
tr
Rise time
ton
Turn-on time
tf
Fall...