isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage-
: VDSS=450 (Min) ·Fas...
isc N-Channel
MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source
Voltage-
: VDSS=450 (Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed especially for high
voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VDSS
Drain-Source
Voltage (VGS=0)
VALUE
UNI T
450
V
VGS
Gate-Source
Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
7
A
Ptot
Total Dissipation@TC=25℃
100
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SK1386
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel
Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage VGS=0; ID= 1mA
VGS(th) Gate Threshold
Voltage
VDS= 0V; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS=450V; VGS= 0
VSD
Diode Forward
Voltage
IF=7A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=6A;RL=25Ω
toff
Turn-off time
2SK1386
MIN TYP MAX UNIT
450
V
2.5
3.5
5.0
V
0.98 1.3
Ω
±100 nA
500
uA
1.1 1.65
V
50
80
ns
70
110
ns
50
80
ns
130 200
ns
Notice: ISC reserves the rights to make changes...