2SK1358

TOSHIBA Discrete Semiconductors Field Effect Transistor Silicon N Channel MOS Type (π-MOS II.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features Low Drain-Source ON Resistance - RDS(ON) = 1.1Ω (Typ.) High Forward Transfer Admittance - Yfs = 4.0S (Typ.) Low Leakage Current - IDSS = 300µA (Max.) @ VDS = 720V Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Drain-Gate Voltage (RGS = 20kΩ) Gate-Source Voltage Drain Current DC Pulse Drain Power Dissipation (Tc = 25°C) Channel Temperature Storage Temperature Range VDSS VDGR VGSS ID IDP PD 900 900 ±30 9 27 150 Tch 150 Tstg -55 ~ 150 UNIT V V V A W °C °C Thermal Characteristics CHARACTERISTIC SYMBOL MAX. UNIT Thermal Resistance, Channel to Case Thermal Resistance, Channel to Ambient Rth(ch-c) Rth(ch-a) 0.833 50 °C/W °C/W This transistor is an electrostatic sensitive device. Please handle with care. 2SK1358 Industrial Applications Unit in mm TOSHIBA CORPORATION 1/6 2SK1358 Electrical Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Gate Leakage Current Drain Cut-off Current Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source ON Resistance Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Output Capacitance Rise Time Switching Time Turn-on Time Fall Time Turn-off Time IGSS IDSS V(BR) DSS...