2SK1330A

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT DSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 8 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35 ℃/W 2SK1330A isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA VGS(th) Gate Threshold Voltage VDS=25V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=5A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=640V; VGS= 0 ton Turn-on time toff Turn-off time VGS=10V;ID=5A; RL=40Ω 2SK1330A MIN TYP MAX UNIT 900 V 1.0 5.0 V 1.4 1.8 Ω ±1 uA 0.1 m A 110 ns 420 ns Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information co...