isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Mi...
isc N-Channel
MOSFET Transistor
DESCRIPTION ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 800V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high
voltage, high speed power switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage (VGS=0)
800
V
VGS
Gate-Source
Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
2
A
Ptot
Total Dissipation@TC=25℃
75
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
0.83 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
35
℃/W
2SK1323
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel
Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold
Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=1A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS=800V; VGS= 0
2SK1323
MIN TYP MAX UNIT
800
V
2.0
4.0
V
6.50
Ω
±100 nA
500
uA
Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our product...