2SK1280

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 18 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT th j-c Thermal Resistance,Junction to Case 0.83 ℃/W th j-a Thermal Resistance,Junction to Ambient 35.0 ℃/W 2SK1280 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 2SK1280 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= 0V; ID=10mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=9A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 VSD Diode Forward Voltage IF=18A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=18A;RL=25Ω toff Turn-off time MIN TYP MAX UNIT 500 V 2.1 3.0 4.0 V 0.35 0.50 Ω ±100 nA 500 uA 0.85 1.6 V 150 220 ns 185 270 ns 180 270 ...