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2SK1279 Datasheet

Part Number 2SK1279
Manufacturers Fuji Electric
Logo Fuji Electric
Description N-channel MOS-FET
Datasheet 2SK1279 Datasheet2SK1279 Datasheet (PDF)

2SK1279 F-V Series > Features - Include Fast Recovery Diode - High Voltage - Low Driving Power N-channel MOS-FET 500V 0,58Ω 15A 125W > Outline Drawing > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range.

  2SK1279   2SK1279






Part Number 2SK1279
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet 2SK1279 Datasheet2SK1279 Datasheet (PDF)

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VDSS Drain-Source Voltage (VGS=0) VALUE UNI T 500 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 15 A Ptot Total Dissipati.

  2SK1279   2SK1279







N-channel MOS-FET

2SK1279 F-V Series > Features - Include Fast Recovery Diode - High Voltage - Low Driving Power N-channel MOS-FET 500V 0,58Ω 15A 125W > Outline Drawing > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 500 15 60 15 ±20 125 150 -55 ~ +150 Unit V A A A V W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Diode Forward On-Voltage Reverse Recovery Time Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t V t GSS DS(on) fs iss oss rss d(on) r d(off) f SD rr Test conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=500V Tch=25°C VGS=0V VGS=±20V VDS=0V ID=8A VGS=10V ID=8A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=15A VGS=10V RGS=25 Ω IF=IDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Min. 500 2,1 Typ. 3,0 10 10 0,4 13 2000 270 140 30 100 400 160 0,95 150 Max. 4,0 500 100 0,58.


2005-03-30 : M27C320    M27C322    M27C400    M27C405    M27C512    2SD600    2SD600K    2SD601A    2SD602    2SD602A   


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