Silicon Junction FETs (Small Signal)
2SK123
Silicon N-Channel Junction FET
For impedance conversion in low frequency Fo...
Silicon Junction FETs (Small Signal)
2SK123
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone
+0.2 5.8−0.3
unit: mm
s Features
q High mutual conductance gm q Low noise
voltage of NV
0.4−0.05
+0.1
2.4±0.1 1 0.95 0.95 1.9±0.2
1.5−0.05
+0.25
1.9±0.1
1.45 2 0.16−0.06
+0.1 +0.1
3
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source
voltage Drain to Gate
voltage Drain to Source current Drain to Gate current Gate to Source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VDGO IDSO IDGO IGSO PD Topr Tstg Ratings 20 20 2 2 2 200 −20 to +80 −55 to +150 Unit V V mA mA mA mW °C °C
0.4−0.05
+0.1
0.4−0.05
1: Drain 2: Source 3: Gate Mini Flat Package (3-pin)
Marking Symbol: 1H
Note: For the forming type, (Y) is indicated after the part No.
s Electrical Characteristics (Ta = 25°C)
Parameter Current consumption Drain to Source cut-off current Mutual conductance Noise figure Symbol ID IDSS gm NV Conditions VD = 4.5V, CO = 10pF, RD = 2.2kΩ ± 1% VDS = 4.5V, VGS = 0 VD = 4.5V, VGS = 0, f = 1kHz VD = 4.5V, RD = 2.2kΩ ± 1% CO = 10pF, A-curve VD = 4.5V, RD = 2.2kΩ ± 1% CO = 10pF, eG = 10mV, f = 1kHz VD = 12V, RD = 2.2kΩ ± 1% CO = 10pF, eG = 10mV, f = 1kHz VD = 1.5V, RD = 2.2kΩ ± 1% CO = 10pF, eG = 10mV, f = 1kHz −3 2 min 100 95 0.7 1.6 4 typ max 600 480 Unit µA µA mS µV
GV1
Voltage gain GV2 GV3
Voltage gain difference ∆|GV2 − GV1| ∆|GV1 − GV3|
dB
0 −4.5 0 0
3.3 ...