isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage-
: VDSS=900V(Min) ·Fast...
isc N-Channel
MOSFET Transistor
DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source
Voltage-
: VDSS=900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high
voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage (VGS=0)
900
V
VGS
Gate-Source
Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
8
A
Ptot
Total Dissipation@TC=25℃
100
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.25 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
30
℃/W
2SK1217
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel
Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold
Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS=900V; VGS= 0
VSD
Forward On-
Voltage
IS=8A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=8A; RL=25Ω
toff
Turn-off time
2SK1217
MIN TYP. MAX UNIT
900
V
2.5
3.5
5.0
V
1.5 2.0
Ω
±100 nA
500 uA
1.0
1.5
V
230 350
ns
280 425
ns
160 240
ns
620 ...