isc N-Channel MOSFET Transistor
2SK1200
DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V...
isc N-Channel
MOSFET Transistor
2SK1200
DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high
voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage (VGS=0)
900
V
VGS
Gate-Source
Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
3
A
Ptot
Total Dissipation@TC=25℃
80
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~15 0
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
th j-c
Thermal Resistance,Junction to Case
0.83 ℃/W
th j-a
Thermal Resistance,Junction to Ambient 35 ℃/W
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isc N-Channel
Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold
Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 1.5A
IGSS
Gate Source Leakage Current
VGS= ±16V;VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS=720V; VGS= 0
VSD
Diode Forward
Voltage
IF=3A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=2A; RL=15Ω
toff
Turn-off time
2SK1200
MIN TYP MAX UNIT
900
V
2.0
4.0
V
5.0
7.0
Ω
±10 uA
250
uA
0.95
V
70
ns
80
ns
60
ns
120
ns
Notice： ISC...
