isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Min...
isc N-Channel
MOSFET Transistor
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 450V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high
voltage, high speed power switching
applications such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage (VGS=0)
450
V
VGS
Gate-Source
Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
5
A
Ptot
Total Dissipation@TC=25℃
60
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
2.08 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
75
℃/W
2SK1007
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel
Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage
VGS= 0; ID= 1mA
VGS(th) Gate Threshold
Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 2.5A
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS= 450V; VGS= 0
VSD
Forward On-
Voltage
IS=5A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=10A; RL=25Ω
toff
Turn-off time
2SK1007
MIN TYP. MAX UNIT
450
V
2.5
3.5
5.0
V
1.1
1.6
Ω
±100 n...