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Part Number
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2SJ649 |
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Manufacturer
|
NEC |
|
Description
|
MOS FIELD EFFECT TRANSISTOR |
|
Published
|
Jan 25, 2007 |
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Datasheet
|
 2SJ649 PDF File
|
Features
• Low on-state resistance: RDS(on)1 = 48 mΩ MAX.(VGS = –10 V, ID = –10 A) RDS(on)2 = 75 mΩ MAX.(VGS = –4.0 V, ID = –10 A)
• Low input capacitance: Ciss = 1900 pF TYP.(VDS = –10 V, VGS = 0 V)
• Built-in gate protection diode (Isolated TO-220)
ABSO...
Similar Datasheet
2SJ649 PDF File
