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2SJ595 Datasheet

Part Number 2SJ595
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description DC / DC Ro[^p
Datasheet 2SJ595 Datasheet2SJ595 Datasheet (PDF)

2SJ595 No. 2SJ595 µ µ µ   6.5 5.0 4 1.5 1.5 2.3 0.5 6.5 5.0 4 2.3 0.5 7.0 5.5 5.5 7.0 0.8 1.6 0.8 1.2 7.5 1 0.6 2 3 2.5 0.85 0.7 0.85 0.5 0.6 0.5 1.2 0 0.2 1 2 3 2.3 2.3 2.3 2.3 1.2 2SJ595 Ω Ω VDD= --30V VIN 0V --10V VIN PW=10µs D.C. 1% ID= --3A RL=10Ω D VOUT G P.G 50Ω 2SJ595 S ° ° Ω ° Ω ° ° ° ° ° 2SJ595     ° ° ° ° ° ° µ µ ° ° ° 2SJ595 .

  2SJ595   2SJ595






Part Number 2SJ599
Manufacturers NEC
Logo NEC
Description P-Channel MOSFET
Datasheet 2SJ595 Datasheet2SJ599 Datasheet (PDF)

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ599 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. www.DataSheet4U.com ORDERING INFORMATION PART NUMBER 2SJ599 2SJ599-Z PACKAGE TO-251 TO-252 FEATURES • Low on-state resistance: RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 111 mΩ MAX. (VGS = –4.0 V, ID = –10 A) • Low Ciss: Ciss = 1300 pF TYP. • Built-in gate protec.

  2SJ595   2SJ595







Part Number 2SJ598-Z
Manufacturers Kexin
Logo Kexin
Description P-Channel MOSFET
Datasheet 2SJ595 Datasheet2SJ598-Z Datasheet (PDF)

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  2SJ595   2SJ595







Part Number 2SJ598
Manufacturers INCHANGE
Logo INCHANGE
Description P-Channel MOSFET
Datasheet 2SJ595 Datasheet2SJ598 Datasheet (PDF)

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤130mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Built in gate protection diode ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous ±12 IDM Drain Current-Single Pulsed ±30 PD Total Dissipation @TC=25℃ 23 T.

  2SJ595   2SJ595







Part Number 2SJ598
Manufacturers Guangdong Kexin Industrial
Logo Guangdong Kexin Industrial
Description MOSFET
Datasheet 2SJ595 Datasheet2SJ598 Datasheet (PDF)

SMD Type MOS Field Effect Transistor www.datasheet4u.com IC MOSFET 2SJ598 TO-252 +0.15 1.50-0.15 Features Low on-resistance RDS(on)1 = 130 m RDS(on)2 = 190 m MAX. (VGS =-10 V, ID = -6 A) MAX. (VGS = -4.0 V, ID =-6 A) +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Built-in gate protection diode +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 1 Gate 2 Drain 3 Source 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 Absolute Max.

  2SJ595   2SJ595







Part Number 2SJ598
Manufacturers NEC
Logo NEC
Description P-Channel MOSFET
Datasheet 2SJ595 Datasheet2SJ598 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A) • Low Ciss: Ciss = 720 pF TYP. • Built-in gate protection diode • TO-251/TO-252 package ORDERING INFORMATION PART NUMBER PACKAGE 2SJ598 TO-251 (MP-3) 2SJ598-Z TO-252 (MP.

  2SJ595   2SJ595







DC / DC Ro[^p

2SJ595 No. 2SJ595 µ µ µ   6.5 5.0 4 1.5 1.5 2.3 0.5 6.5 5.0 4 2.3 0.5 7.0 5.5 5.5 7.0 0.8 1.6 0.8 1.2 7.5 1 0.6 2 3 2.5 0.85 0.7 0.85 0.5 0.6 0.5 1.2 0 0.2 1 2 3 2.3 2.3 2.3 2.3 1.2 2SJ595 Ω Ω VDD= --30V VIN 0V --10V VIN PW=10µs D.C. 1% ID= --3A RL=10Ω D VOUT G P.G 50Ω 2SJ595 S ° ° Ω ° Ω ° ° ° ° ° 2SJ595     ° ° ° ° ° ° µ µ ° ° ° 2SJ595 .


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