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2SJ271

Part Number	2SJ271
Manufacturer	Sanyo Semicon Device
Description	P-Channel Silicon MOSFET
Published	Oct 15, 2015
Detailed Description	2SJ271 P- Channel Silicon MOS FET Very High-Speed Switching Applications Features and Applications • Low ON-state resis...
Datasheet	2SJ271 PDF File

Overview

2SJ271 P- Channel Silicon MOS FET Very High-Speed Switching Applications Features and Applications • Low ON-state resistance.
• Very high-speed switching.
• Low-voltage dreve.
TENTATIVE Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current (D.
C) Drain Current (Pulse) Allowable power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PW≤10µS, dutycycle≤1% PD Tc=25°C Tch Tstg --100 ±15 --15 --60 70 150 --55 to +150 Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Gate to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static...

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