isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min.) ·D...
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Breakdown
Voltage-
: V(BR)CEO = 60V(Min.) ·DC Current Gain-
: hFE = 2000(Min) @ IC= 1A ·Low Collector Saturation
Voltage ·Complement to Type 2SB794 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·They are suitable for use to operate from IC without
predriver, such as hammer driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
150
V
VCEO
Collector-Emitter
Voltage
60
V
VEBO
Emitter-Base
Voltage
8
V
IC
Collector Current-Continuous
1.5
A
ICM
Collector Current-Pulse
3.0
A
IB
Base Current
Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃
Ti
Junction Temperature
0.15
A
1.0 W
10
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD985
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
2SD985
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation
Voltage IC= 1A; IB= 1mA
VBE(sat) Base-Emitter Saturation
Voltage
IC= 1A; IB= 1mA
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 2V
hFE-2
DC Current Gain
IC= 1A; VCE= 2V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC=1.0A;IB1=IB2=1.0mA VCC=50V; RL=50Ω
MIN TYP....