2SD985

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min.) ·DC Current Gain- : hFE = 2000(Min) @ IC= 1A ·Low Collector Saturation Voltage ·Complement to Type 2SB794 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·They are suitable for use to operate from IC without predriver, such as hammer driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Pulse 3.0 A IB Base Current Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.15 A 1.0 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD985 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD985 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 1mA ICBO Collector Cutoff Current VCB= 60V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A; VCE= 2V hFE-2 DC Current Gain IC= 1A; VCE= 2V Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC=1.0A;IB1=IB2=1.0mA VCC=50V; RL=50Ω MIN TYP....