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2SD970 Datasheet

Part Number 2SD970
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD970 Datasheet2SD970 Datasheet (PDF)

2SD970(K) Silicon NPN Triple Diffused Application Medium speed and power switching complementary pair with 2SB791(K) Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 2 kΩ (Typ) 200 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO.

  2SD970   2SD970






Part Number 2SD970
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD970 Datasheet2SD970 Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor 2SD970 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·Low Saturation Voltage ·Complement to Type 2SB791 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector.

  2SD970   2SD970







Part Number 2SD970
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD970 Datasheet2SD970 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD970 www.datasheet4u.com DESCRIPTION ·With TO-220 package ·High DC current gain ·DARLINGTON ·Complement to type 2SB791 APPLICATIONS ·For medium speed and power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage C.

  2SD970   2SD970







Silicon NPN Transistor

2SD970(K) Silicon NPN Triple Diffused Application Medium speed and power switching complementary pair with 2SB791(K) Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 2 kΩ (Typ) 200 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg 1 Ratings 120 120 7 8 12 40 150 –55 to +150 Unit V V V A A W °C °C 2SD970(K) Electrical Characteristics (Ta = 25°C) Item Symbol Min 120 7 — — 1000 — — — — — — — Typ — — — — — — — — — 0.4 5.4 1.1 Max — — 100 10 20000 1.5 3.0 2.0 3.5 — — — V V V V µs µs µs Unit V V µA µA Test conditions I C = 25 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 4 A*1 I C = 4 A, IB = 8 mA*1 I C = 8 A, IB = 80 mA*1 I C = 4 A, IB = 8 mA*1 I C = 8 A, IB = 80 mA*1 I C = 4 A, IB1 = –IB2 = 8 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 t on t stg tf Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) 30 iC (peak) Collector current IC (A) .


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