2SD960

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max) @IC= 3A ·Complement to Type 2SB868 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD960 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD960 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 0.15A VBE(sat) Base-Emitter Saturation Voltage IC= 3.0A; IB= 0.15A ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.1A; VCE= 2V hFE-2 DC Current Gain IC= 1A; VCE= 2V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V Switching times ton Turn-on Time tstg Storage Time IC= 1A, IB1=IB2= 0.1A tf Fall Time  hFE-2 Classifications R Q P 60-...