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2SD916 Datasheet

Part Number 2SD916
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD916 Datasheet2SD916 Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor 2SD916 DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifiers ·Relay& solenoid drivers ·Motor controls ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VCEO(SUS) Collector-Emitter Vo.

  2SD916   2SD916






Part Number 2SD917
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD916 Datasheet2SD917 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 330V(Min) ·High Power Dissipation ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collecto.

  2SD916   2SD916







Part Number 2SD917
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD916 Datasheet2SD917 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD917 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·High speed switching ·High VCBO ·Large collector power dissipation APPLICATIONS ·For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM ICM PC Tj Tstg PARAMETER Collector-base vol.

  2SD916   2SD916







Part Number 2SD911
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD916 Datasheet2SD911 Datasheet (PDF)

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD911 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High Current Capability ·Good Linearity of hFE ·High Reliability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio amplifier ·Series regulators ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 .

  2SD916   2SD916







Part Number 2SD91
Manufacturers ETC
Logo ETC
Description NPN Transistor
Datasheet 2SD916 Datasheet2SD91 Datasheet (PDF)

www.DataSheet4U.com .

  2SD916   2SD916







NPN Transistor

isc Silicon NPN Darlington Power Transistor 2SD916 DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifiers ·Relay& solenoid drivers ·Motor controls ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VCEO(SUS) Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.0 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 7.5mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 7.5mA ICBO Collector Cutoff Current VCB= 60V; IE= 0 IEBO Emitte.


2020-09-21 : 2SD1729    2SC4075    2SC4105    2SD687    2SD675    2SD673    2SD613    2SD608    2SD612    2SD600K   


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