2SD874

Transistor 2SD874, 2SD874A Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB766 and 2SB766A Unit: mm s Features q q q 0.4max. 45° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD874 2SD874A 2SD874 VCEO VEBO ICP IC PC* Tj Tstg VCBO Symbol (Ta=25˚C) Ratings 30 60 25 50 5 1.5 1 1 150 –55 ~ +150 Unit V 3 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 2 1 4.0–0.20 0.4±0.04 emitter voltage 2SD874A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V marking V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion Marking symbol : Z(2SD874) Y(2SD874A) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD874 2SD874A 2SD874 2SD874A (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 500mA*2 VCE = 5V, IC = 1A*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz *2 min typ max 0.1 Unit µA V 30 60 25 50 5 85 50 0.2 0.85 200 20 0.4 1.2 160 340 Emitter to base voltage Forward current transfer ratio Collector to emitter saturation v...