SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD845
www.datasheet4u.com
DESCRIPTION ·...
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD845
www.datasheet4u.com
DESCRIPTION ·With MT-200 package ·Complement to type 2SB755 ·High transition frequency ·High breakdown
voltage :VCEO=150V(min)
APPLICATIONS ·For power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 12 1.2 120 150 -55~150 UNIT V V V A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown
voltage Emitter-base breakdown
voltage Collector-emitter saturation
voltage Base-emitter on
voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.1A; IB=0 IE=10mA; IC=0 IC=5 A;IB=0.5 A IC=5A ; VCE=5V VCB=150V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V 55 20 MIN 150 5 TYP.
www.datasheet4u.com
2SD845
SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE fT
MAX
UNIT V V
2.0 1.5 -50 -50 160
V V µA µA
MHz
hFE classifications R 55-110 O 80-160
2
SavantIC Semiconductor
Product Specif...