isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage
: VCE(s...
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation
Voltage
: VCE(sat)= 0.5V(Max)@IC= 4A ·High Collector Power Dissipation ·Complement to Type 2SB753 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High current switching applications ·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
100
V
VCEO Collector-Emitter
Voltage
80
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
7
A
1.5 W
40
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD843
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
2SD843
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 4A; IB= 0.4A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 4A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB= 100V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 1V
hFE-2
DC Current Gain
IC= 4A; VCE= 1V
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 4V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall ...