SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD817
www.datasheet4u.com
DESCRIPTION ·...
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD817
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·High
voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·High
voltage power switching TV horizontal deflection output applications
PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 600 6 1.5 50 150 -55~150 UNIT V V V A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
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2SD817
SYMBOL
TYP.
MAX
UNIT
V(BR)EBO
Emitter-base breakdown
voltage
IE=1mA; IC=0
6
V
V(BR)CEO
Collector-emitter breakdown
voltage
IC=10mA; IB=0
600
V
VCEsat
Collector-emitter saturation
voltage
IC=1.2A; IB=0.3A
5.0
V
VBEsat
Base-emitter saturation
voltage
IC=1.2A; IB=0.3A
1.5
V
ICBO
Collector cut-off current
VCB=800V;IE=0
10
µA
IEBO
Emitter cut-off current
VEB=6V; IC=0
10
µA
hFE
DC current gain
IC=0.3A ; VCE=5V
10
30
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
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2SD817
Fig.2 ...