isc
Silicon NPN Darlingtion
Power Transistor
DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain-
hFE = 2000 (Min) @ IC =1 Adc ·Collector-Emitter Breakdown
Voltage-
V(BR)CEO= 100V(Min) ·Wide Area of Safe Operation ·Minimum Lot-t...