NPN EPITAXIAL SILICON TRANSISTOR
Description
RoHS 2SD780/2SD780A
SOT-23-3L
2SD780/2SD780A DFEATURES Power dissipation
TRANSISTOR (NPN)
1. BASE 2. EMITTER 3. COLLECTOR
TPCM: 0.2 W (Tamb=25℃)
1. 02
.,LCollector current
0. 95¡ À0. 025
0. 35 2. 92¡ À0. 05
ICM: 0.3 Collector-base voltage
A
OV(BR)CBO:
V(BR)CBO:
60 V 2SD780 80 V 2SD780A
1. 9
COperating and storage junction temperature range
TJ...
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