isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD665
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(B...
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD665
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 200V(Min) ·High Current Capability ·Excellent Safe Operating Area ·Complement to Type 2SB645 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 200W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
200
V
VCEO
Collector-Emitter
Voltage
200
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
15
A
IE
Emitter Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
-15
A
150
W
150
℃
-65~150 ℃
isc website:www.iscsemi.com
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD665
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 30mA; IB= 0
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 10mA; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 5A; IB= 0.5A
VBE(on) Base-Emitter On
Voltage
IC= 5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
fT
Current-Gain—Bandwidth Produ...