2SD638

Transistor 2SD638, 2SD639 Silicon NPN epitaxial planer type For medium-power general amplification Complementary to 2SB643 and 2SB644 6.9±0.1 2.5±0.1 1.0 Unit: mm 2.4±0.2 2.0±0.2 3.5±0.1 q q Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25˚C) Ratings 30 60 25 50 7 1 0.5 600 150 –55 ~ +150 Unit V 1.0 0.45±0.05 1 s Features 1.5 1.5 R0.9 R0.9 0.4 1.0±0.1 R 0. 7 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD638 2SD639 2SD638 VCEO VEBO ICP IC PC Tj Tstg VCBO Symbol 0.85 0.55±0.1 3 2 emitter voltage 2SD639 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V 2.5 2.5 V A A mW ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD638 2SD639 2SD638 2SD639 (Ta=25˚C) Symbol ICBO ICEO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob *1 Conditions VCB = 20V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 10mA VCE = 10V, IC = 500mA*2 IC = 300mA, IB = 30mA VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ 1.25±0.05 max 0.1 1 4.1±0.2 4.5±0.1 Unit µA µA V 30 60 25 50 7 85 40 160 90 0.35 200 6 *2 V V 340 Emitter to base voltage...