2SD592

Transistor 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB621 and 2SB621A 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.2 s Features q q Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). (Ta=25˚C) Ratings 30 60 25 50 5 1.5 1 750 150 –55 ~ +150 Unit V s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD592 2SD592A 2SD592 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol 13.5±0.5 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 emitter voltage 2SD592A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A A mW ˚C ˚C 2.54±0.15 1 2 3 2.3±0.2 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SD592 2SD592A 2SD592 2SD592A (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob *1 Conditions VCB = 20V, IE = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 500mA*2 VCE = 5V, IC = 1A*2 IC = 500mA, IB = 50mA*2 IC = 500mA, IB = 50mA*2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 0.1 Unit µA V 30 60 25 50 5 85 50 0.2 0.85 200 20 *2 V V 160 340 Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector...