2SD560

www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC output of devices such as pulse motor drivers and relay drivers, and PC terminals. ORDERING INFORMATION Ordering Name 2SD560 Package TO-220AB FEATURES C-to-E reverse diode inserted Low collector saturation voltage (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg TC = 25°C TA = 25°C PW ≤ 10 ms, duty cycle ≤ 50% Conditions Ratings 150 100 7.0 ±8.0 0.5 30 1.5 150 −55 to +150 Unit V V V A A W W °C °C DataShee DataSheet4U.com ±5.0 A INTERNAL EQUIVALENT CIRCUIT 1. Base 2. Collector 3. Emitter The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. DataSheet4U.com Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. DataSheet 4 U .com Document No. D14863EJ3V0DS00 (3rd edition) Date P...