2SD531

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD531 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max.) @ IC= 4.0A ·With TO-220C Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 43 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD531 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 100uA; IC= 0 V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 1A ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 0.1A; VCE= 2V MIN...