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2SD525

Part Number	2SD525
Manufacturer	Toshiba
Description	NPN Transistor
Published	Jul 16, 2018
Detailed Description	SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : VCEO=100V • Low Coll...
Datasheet	2SD525 PDF File

Overview

SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS.
FEATURES • High Breakdown Voltage : VCEO=100V • Low Collector Saturation Voltage : VCE ( sat )=2.
0V(Max.
• Complementary to 2SB595.
• Recommended for 30W High Fidelity Audio Frequency Amplifier Output Stage.
Unit in mm 10.
3MAX.
^3.
6±0.
2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL v CBO v CEO VEBO ic IE IB pC Tj T stg RATING 100 100 5 5 -5 4 UNIT V V V A A A 40 W 150 -55VL50 °C °C 1.
BASE 2.
COLLECTOR (HEAT SINK) a EMI...

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