Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD5075T
DESCRIPTION ¡¤With TO-220C packa...
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD5075T
DESCRIPTION ¡¤With TO-220C package ¡¤High breakdown
voltage ¡¤High speed switching APPLICATIONS ¡¤Color TV horizontal output applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25¡æ )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25¡æ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 3.5 10 75 150 -55~150 ¡æ ¡æ UNIT V V V A A W
Free Datasheet http://www.datasheet4u.com/
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25¡æ unless otherwise specified PARAMETER CONDITIONS MIN
2SD5075T
SYMBOL
TYP.
MAX
UNIT
VCEsat
Collector-emitter saturation
voltage
IC=2.5A;IB=0.8A
8.0
V
VBEsat IEBO
Base-emitter saturation
voltage
IC=2.5A;IB=0.8A VEB=5V; IC=0
1.5
V
Emitter cut-off current
1.0
mA
ICBO
Collector cut-off current
VCB=800V; IE=0
10
¦Ì
A
hFE
DC current gain
IC=1.5 A ; VCE=5V
8
fT
Transition frequency
IC=0.5 A ; VCE=10V IC=3A;IB1=0.8A;IB2=-1.6A VCC=200V;RL=66.7¦¸
3
MHz
tf
Fall time
0.4
¦Ì
s
2
Free Datasheet http://www.datasheet4u.com/
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD5075T
Fig.2 Outline dimensions (unindic...