2SD467

2SD467 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB561 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD467 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 25 20 5 0.7 1.0 0.5 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 20 5 — 1 Typ — — — — — 0.19 0.76 280 12 Max — — — 1.0 240 0.5 1.0 — — Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 1 V, IC = 0.15 A (Pulse test) Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Note: B 85 to170 C 120 to 240 V(BR)EBO I CBO hFE* 85 — — — — VCE(sat) VBE fT Cob V V MHz pF I C = 0.5 A, IB = 0.05 A (Pulse test) VCE = 1 V, IC = 0.15 A (Pulse test) VCE = 1 V, IC = 0.15 A (Pulse test) VCB = 10 V, IE = 0, f = 1 MHz 1. The 2SD467 is grouped by h FE as follows. 2 2SD467 Typical Output Characteristics Maximum Collector Dissipation Curve 0.6 Collector Power Dissipation PC (W) Collector Cu...