isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD437
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: = V(BR)CEO 350V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in power amplifier and switching regulator
applic...
