isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min) ·High Power Dissipation-
: PC= 60W(Max)@TC=25℃ ·Complement to Type 2SB558 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 40W high-fidelity au...
