DATA SHEET
SILICON POWER TRANSISTOR
2SB548, 549/2SD414, 415
PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POW...
DATA SHEET
SILICON POWER TRANSISTOR
2SB548, 549/2SD414, 415
PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER
AMPLIFIERS
FEATURES
Ideal for audio amplifier drivers with 30 W to 50 W output High
voltage Available for small mount spaces due to small and thin package Easy to be attached to radiators
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Collector current Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* PT (Ta = 25°C) PT (Tc = 25°C) Tj Tstg 2SB548/ 2SD414 −80/80 2SB549/ 2SD415 −100/100 Unit V V V A A W W °C °C
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−100/120 −5.0/5.0 −0.8/0.8 −1.5/1.5 1.0 10 150 −55 to +150
Electrode Connection
* PW ≤ 10 ms, duty cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain Collector saturation
voltage Base saturation
voltage Gain bandwidth product Collector capacitance Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = −80/80 V, IE = 0 VEB = −3.0/3.0 V, IC = 0 VCE = −5.0/5.0 V, IC = −2.0/2.0 mA* VCE = −5.0/5.0 V, IC = −200/200 mA* IC = −500/500 mA, IB = −50/50 mA* IC = −500/500 mA, IB = −50/50 mA* VCE = −5.0/5.0 V, IC = −100/100 mA VCB = −10/10 V, IE = 0, f = 1.0 MHz 20 40 90 −0.4/0.3 −0.9/0.9 70/45 25/15 320 −2.0/2.0 −1.5/1.5 V V MH...