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2SD380

Part Number	2SD380
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Dec 5, 2011
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimu...
Datasheet	2SD380 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line-operated horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A ICM Collector Current-Peak 7 A IBM Base Current-Peak PC Collector Power Dissipation @ TC≤75℃ TJ Junction Temperature 3.
5 A 50 W 130 ℃ Tstg ...

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