2SD330

isc Silicon NPN Power Transistor 2SD330 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A ·Complement to Type 2SB514 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Especially suited for use in output stage of 10W AF power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 1.75 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V ICBO Collector Cutoff Current VCB= 20V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 2V hFE-2 DC Current Gain IC= 0.1A ; VCE= 2V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 2SD330 MIN TYP. MAX UNIT 50 V 1.0 V 1.5 V 100 μA 1.0 mA 40 320 35 8 MHz ...