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2SD318
NPN Transistor
Description
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD318 DESCRIPTION ·Collector-Emitter Breakdown
Voltage
- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation
Voltage
- : VCE(sat)= 1.2V(Max) @IC= 3.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier...
INCHANGE
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2SD318
NPN Transistor
- Panasonic
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