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2SD314

Part Number	2SD314
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD314 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(B...
Datasheet	2SD314 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD314 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
0V(Max) @IC= 2.
0A ·Complement to Type 2SB508 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage 60 V 60 V 5 V IC Collector Current-Continuous 3.
0 A ICM Collector Current-Peak Collector Power Dissipation PC @ Ta=25℃ Collector Po...

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