RoHS 2SD2908
2SD2908 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM:
0.5 W (Tamb=25℃)
.,LCollector current
ICM:...
RoHS 2SD2908
2SD2908 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM:
0.5 W (Tamb=25℃)
.,LCollector current
ICM: 5 A Collector-base
voltage
OV(BR)CBO:
50 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-base breakdown
voltage
Collector-emitter breakdown
voltage
OEmitter-base breakdown
voltage RCollector cut-off current TEmitter cut-off current CDC current gain
Collector-emitter saturation
voltage
ETransition frequency LCollector output capacitance
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE(1) VCE(sat)
fT
Cob
Test conditions
Ic=50µA, IE=0 Ic=1mA, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=2V, IC=0.5A IC=4A, IB=100mA VCE=6V, IC=50mA, f=100MHz VCB=20V, IE=0, f=1MHz
MIN TYP MAX UNIT
50 V 20 V 6V
0.5 µA 0.5 µA 120 390 1V 150 MHz 30 pF
ECLASSIFICATION OF hFE(1) JRank ERange WMarking
Q 120-270
AHQ
R 180-390
AHR
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:
[email protected]
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