2SD2657
Transistors
Low frequency amplifier
2SD2657
zApplication Low frequency amplifier Driver zExternal dimensions (U...
2SD2657
Transistors
Low frequency amplifier
2SD2657
zApplication Low frequency amplifier Driver zExternal dimensions (Units : mm)
Each lead has 0.4 same dimensions
1.0MAX 0.7
zFeatures 1) A collector current is large. 2) VCE(sat) ≦ 350mV At IC = 1A / IB = 50mA
(3)
1.6
0~0.1
0.3~0.6.
ROHM : TSMT3
2.8
(2)
(1)
0.95 0.95 1.9 2.9 0.16
Abbreviated symbol : FZ
(1) Emitter (2) Base (3) Collector
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base
voltage
Collector-emitter
voltage Emitter-base
voltage Collector current Power dissipation Junction temperature Range of storage temperature
zPackaging specifications
Unit V V V A A ∗1 mW W °C °C
Package Code Type 2SD2657 Basic ordering unit (pieces) Taping TL 3000
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Limits 30 30 6 1.5 3 500 1∗2 150 −55 to +150
∗1 Single pulse, PW=1ms ∗2 Mounted on a 25×25× t 0.8mm Ceramic substrate
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown
voltage Collector-emitter breakdown
voltage Emitter-base breakdown
voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation
voltage DC current gain Transition frequency Corrector output capacitance
∗ Pulsed
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob
Min. 30 30 6 − − − 270 − −
Typ. − − − − − 140 − 300 11
Max. − − − 100 100 350 680 − −
Unit V V V nA nA mV − MHz pF
Conditions IC=10µA IC=1mA IE=10µA VCB=30V VEB=6V IC=1A, IB=50mA VCE=2V, IC=100mA ∗ VCE=2V, IE=−100mA, f=100MHz ∗ VCB=10V...