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2SD2604

Part Number	2SD2604
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Apr 3, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2604 2SD2604 High-Power Switching Applications Ham...
Datasheet	2SD2604 PDF File

Overview

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) 2SD2604 2SD2604 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.
5 V (max) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 95 V Collector-emitter voltage VCEO 110 ± 15 V Emitter-base voltage VEBO 5 V Collector current DC Pulse IC 5 A ICP 10 Base current IB 0.
7 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2.
0 W 20 Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC ― JEITA SC-67 TOSHI...

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