DATA SHEET
SILICON TRANSISTOR
2SD2583
AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS
FEATURE...
DATA SHEET
SILICON TRANSISTOR
2SD2583
AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS
FEATURES
Low VCE(sat) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) High DC Current Gain hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A)
PACKAGE DIMENSIONS in millimeters (inches) 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) φ 3.2 ± 0.2 ( φ 0.126)
12.0 MAX. (0.472 MAX.)
Maximum
Voltage and Current (TA = 25 °C) Collector to Base
Voltage Collector to Emitter Volteage Emitter to Base
Voltage Collector Current (DC) Collector Current (Pulse)* Base Current (DC) * PW ≤ 10ms, Duty Cycle ≤ 10 % Maximum Power Dissipation Total Power Dissipation (TC = 25 °C) Total Power Dissipation (TA = 25 °C) Maximum Temperature Junction Temperature Storage Temperature PT PT Tj Tstg 10 W 1.0 W 150 °C −55 to 150 °C VCB0 VCE0 VEB0 IC(DC) IC(Pulse) IB(DC) 30 V 30 V 6.0 V 5.0 A 10 A 2.0A
1 2 3
2.5 ± 0.2 (0.098) 13.0 MIN. (0.512 MIN.)
1.2 (0.047)
0.55+0.08 −0.05 (0.021)
0.8 +0.08 −0.05 (0.031) 2.3 2.3 (0.090) (0.090)
1.2 (0.047)
1. Emitter 2. Collector connected to mounting plane 3. Base
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS Collector Cutoff Currnet Emitter Cutoff Current DC Current Gain DC Current Gain Collector Saturation
Voltage Collector Saturation
Voltage Collector Saturation
Voltage Base Saturation
Voltage Gain Bandwidth Product Output Capacitance SYMBOL ICB0 IEB0 hFE1 hFE2 VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat) fT Cob TEST CONDITIONS VCB = 30 V, IE = 0 VEB = 6.0 ...