isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High R...
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown
Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Color TV horizontal deflection output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
1500
V
VCEO
Collector-Emitter
Voltage
800
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current- Continuous
10
A
ICP
Collector Current-Pulse
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
30
A
3.0 W
70
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD2580
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
2SD2580
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining
Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 8A; IB= 1.6A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 8A; IB= 1.6A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
ICES
Collector Cutoff Current
VCE= 1500V ; RBE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
800
V
5.0
V
1.5
V
10 μA
1.0 mA
40
130 mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
15
30
hFE-2
DC Current Gain
tf
Fall Time
IC= 8A ; VCE= 5V
5
IC= 6A , IB1= 1.2A ; IB2= 2.4A PW=2...
