isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain
: hFE= 1500(Min.)@ IC= 1A, VCE= 5V ·Colle...
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain
: hFE= 1500(Min.)@ IC= 1A, VCE= 5V ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO = 200V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for series regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base
Voltage
200
V
VCEO Collector-Emitter
Voltage
200
V
VEBO Emitter-Base
Voltage
6
V
IC
Collector Current-Continuous
5
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
2
A
70
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SD2557
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isc Silicon NPN Darlington Power Transistor
2SD2557
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 10mA, IB= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 1A ,IB= 5mA
ICBO
Collector Cutoff current
VCB= 200V, IE= 0
IEBO
Emitter Cutoff current
VEB= 6V, IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
IE= 0; VCB= 10V; ftest= 1MHz IE= -0.5A; VCE= 10V
MIN TYP. MAX UNIT
200
V
1.5
V
0.1 mA
5.0 mA
1500
6500
110
pF
15
MHz
Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without no...