2SD2556

Power Transistors 2SD2556 Silicon NPN epitaxial planer type Unit: mm For power switching I Features High forward current transfer ratio hFE Allowing supply with the radial taping Low collector to emitter saturation voltage VCE(sat): < 0.5 V 6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1 7.3±0.1 1.8±0.1 0.8 max. 2.5±0.1 0.75±0.1 2.3±0.1 4.6±0.1 1.0±0.1 0.1±0.05 0.5±0.1 (5.3) (4.35) (3.0) I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating 130 80 7 10 5 10 1 150 −55 to +150 °C °C Unit 1 (1.8) 2 3 1.0±0.2 V V V A A W 1: Base 2: Collector 3: Emitter U Type Package Internal Connection C B E Junction temperature Storage temperature I Electrical Characteristics TC = 25°C ± 3°C Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Symbol ICBO IEBO VCEO hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Note) *: Rank classification Rank hFE2 P 130 to 260 Q 90 to 180 * Conditions VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 IC = 1 mA, IB = 0 VCE = 2 V, IC = 0.1 A VCE = 2 V, IC = 2 A IC = 4 A, IB = 0.2 A IC = 4 A, IB = 0.2 A VCE = 10 V, IC = − 0.5 A, f = 10 MHz IC = 2 A, IB1 = 0.2 A, IB2 = − 0.2 A VCC = 50 V Min Ty...