isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
:VCBO= 1700V (Min) ·High Switching Speed ·Low Sat...
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown
Voltage-
:VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation
Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for color TV horizontal deflection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
1700
V
VCEO
Collector-Emitter
Voltage
600
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current- Continuous
5
A
ICM
Collector Current- Pulse
10
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
2.5
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD2551
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 200mA; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 4A; IB= 0.8A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 4A; IB= 0.8A
ICBO
Collector Cutoff Current
VCB= 1700V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
VECF
C-E Diode Forward
Voltage
IF= 5A
fT
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1.0MHz
2SD2551
MIN TYP. MAX UNIT
5
V
5.0
...