isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
：VCBO= 1500V (Min) ·High Switching Speed ·Low Sat...
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown
Voltage-
：VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation
Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
1500
V
VCEO
Collector-Emitter
Voltage
600
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current- Continuous
7
A
ICP
Collector Current- Pulse
14
A
IB
Base Current- Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
3.5
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD2539
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
2SD2539
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 200mA ; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation
Voltage IC= 5A; IB= 1A
5.0
V
VBE(sat) Base-Emitter Saturation
Voltage
IC= 5A; IB= 1A
1.3
V
ICBO
Collector Cutoff Current
VCB= 1500V; IE= 0
1
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
66
200 mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
8
28
hFE-2
DC Current Gain
IC= 5A ; VCE= 5V
5
9
VECF
C-E Diode Forward
Voltage
IF= 5A
2.0
V
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 10V
2
MHz
C...
