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2SD2537 Datasheet

Part Number 2SD2537
Manufacturers Rohm
Logo Rohm
Description Medium Power Transistor
Datasheet 2SD2537 Datasheet2SD2537 Datasheet (PDF)

2SD2537 Transistors Medium Power Transistor (25V, 1.2A) 2SD2537 !Features 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) !External dimensions (Units : mm) 2SD2537 4.0 1.0 2.5 0.5 1.5 0.4 (1) 3.0 0.5 (3) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗1 Single pulse Pw=100ms VCBO VCEO VEBO IC PC.

  2SD2537   2SD2537






Part Number 2SD2539
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD2537 Datasheet2SD2539 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- :VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Coll.

  2SD2537   2SD2537







Part Number 2SD2539
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD2537 Datasheet2SD2539 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2539 www.datasheet4u.com DESCRIPTION ·With TO-3P(H)IS package ·High voltage ;high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for color TV PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitt.

  2SD2537   2SD2537







Part Number 2SD2539
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description NPN Triple Diffused Planar Silicon Transistor
Datasheet 2SD2537 Datasheet2SD2539 Datasheet (PDF)

2SD2539 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2539 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV l High Voltage : VCBO = 1500 V l Low Saturation Voltage : VCE (sat) = 5 V (Max.) l High Speed : tf = 0.3 µs (Typ.) l Bult-in Damper Type l Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current DC Pulse Base Current Collector Power Diss.

  2SD2537   2SD2537







Part Number 2SD2538
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN Transistor
Datasheet 2SD2537 Datasheet2SD2538 Datasheet (PDF)

Power Transistors 2SD2538 Silicon NPN triple diffusion planer type Darlington Unit: mm For power amplification I Features • High forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collect.

  2SD2537   2SD2537







Medium Power Transistor

2SD2537 Transistors Medium Power Transistor (25V, 1.2A) 2SD2537 !Features 1) High DC current gain. 2) High emitter-base voltage. (VEBO=12V) 3) Low saturation voltage. (Max. VCE(sat)=0.3V at IC/IB=500mA/10mA) !External dimensions (Units : mm) 2SD2537 4.0 1.0 2.5 0.5 1.5 0.4 (1) 3.0 0.5 (3) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗1 Single pulse Pw=100ms VCBO VCEO VEBO IC PC Tj Tstg 30 25 12 1.2 2 2 150 −55~+150 V V V A (DC) A (Pulse) ∗1 ∗2 W °C °C ROHM : MPT3 EIAJ : SC-62 0.4 Parameter Symbol Limits Unit 1.5 !Absolute maximum ratings (Ta = 25°C) 1.5 0.4 4.5 1.6 (2) (1) Base (2) Collector (3) Emitter ∗2 When mounted on a 40×40×0.7mm ceramic board. !Packaging specifications and hFE Type 2SD2537 MPT3 DV∗ T100 1000 VW ∗ Denotes h Package hFE Marking Code Basic ordering unit (pieces) FE !Electrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗Measured using pulse current. Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 30 25 12 − − − 820 − − Typ. − − − − − − − 200 20 Max. − − − 0.3 0.3 0.3 2700 − − Unit V V V µA µA V − MHz pF IC=10µA IC=1mA IE=10µA VCB=30V VEB=12V Conditions IC/IB.


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